2008. 2. 19 1/5 semiconductor technical data kmb3d5n40sa n-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for load switch and back-light inverter. features h v dss =40v, i d =3.5a h drain-source on resistance r ds(on) =45m ? (max.) @ v gs =10v r ds(on) =62m ? (max.) @ v gs =4.5v h super high dense cell design maximum rating (ta=25 ? ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q note > *surface mounted on 1 ? 1 fr4 board, t ? 5sec pin connection (top view) characteristic symbol n-ch unit drain-source voltage v dss 40 v gate-source voltage v gss ? 20 v drain current dc@ta=25 ? i d 3.5 a dc@ta=70 ? 2.8 pulsed i dp 14 drain-source-diode forward current i s 1.0 a drain power dissipation ta=25 ? p d 1.25 w ta=70 ? 0.8 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient r thja 100 ? /w 2 3 1 gs d 1 2 3 kn1
2008. 2. 19 2/5 kmb3d5n40sa revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i ds =250 a, v gs =0v, 40 - - v drain cut-off current i dss v gs =0v, v ds =32v - - 0.5 a v gs =0v, v ds =32v, tj=55 ? - - 10 gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na gate threshold voltage v th v ds =v gs, i d =250 a 1.0 - 3.0 v drain-source on resistance r ds(on) * v gs =10v, i d =3.5a - 36 45 m ? v gs =4.5v, i d =3.0a - 56 62 on-state drain current i d(on) * v gs =10v, v ds ? 4.5v 6 - - a forward transconductance g fs * v ds =10v, i d =3.5a - 10 - s dynamic input capaclitance c iss v ds =20v, f=1mhz, v gs =0v - 315 - pf ouput capacitance c oss - 69 - reverse transfer capacitance c rss - 39 - total gate charge q g * v ds =20v, v gs =0v, i d =3.5a - 6.4 10 nc gate-source charge q gs * - 0.7 - gate-drain charge q gd * - 2.1 - turn-on delat time t d(on) * v dd =20v, v gs =10v i d =1a, r g =6 ? - 5 10 ns turn-on rise time t r * - 12 20 turn-off deley time t d(off) * - 20 30 turn-off fall time t f * - 15 25 source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i s =1a - 0.8 1.2 v note > *pulse test : pulse width <300 k , duty cycle < 2%
2008. 2. 19 3/5 kmb3d5n40sa revision no : 0
2008. 2. 19 4/5 kmb3d5n40sa revision no : 0
2008. 2. 19 5/5 kmb3d5n40sa revision no : 0
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